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TechCorr USA offers a range of inspection options to extend system functionality, including:

• Bright Light Inspection variations such as +Gyro, +EdgeGyro, and +Gimbal, catering to different wafer inspection needs and specifications.
• Automated Optical Inspection (AOI) with MIDS module, designed to help detect common visible macro defects without the need for golden images, ensuring integrated operation and reporting.
• P/N Type Detector for determining P-Type or N-Type wafer doping for silicon manufacturers in parallel with wafer alignment.
• Wafer Edge Inspection for scanning wafer bevels for cracks and chips, capturing defects down to minute sizes and aiding in wafer quality assessment.
• Wafer Flip and Wafer Slip Detection options to cater to specific applications and detect slip-related issues using specialized lighting and software.
• Wafer Surface Inspection and Wafer Thickness Measurement services using cutting-edge optics and laser technology for defect detection and precise measurements, aiding in quality control.

With a focus on achieving higher yield and faster time-to-data, TechCorr USA offers Defect Localization and Analysis delivering the following specialized services:

• Optical Fault Isolation: Analyzing the performance of electrically active devices to pinpoint critical defects causing failures in semiconductor manufacturing.
• Thermal Fault Isolation: Utilizing high-sensitivity lock-in infrared thermography to detect localized temperature increases causing device failures.
• Transmission Electron Microscopy (TEM) Imaging and Analysis: High-resolution imaging and analysis of semiconductor devices for diagnosing failure mechanisms and optimizing process yields.
• Scanning Electron Microscopes (SEM) for Semiconductor Analysis: Covering various imaging tasks and advanced failure analysis techniques requiring precise voltage-contrast measurements.
• Nanoprobing: Precisely localizing electrical faults critical for an effective transmission electron microscopy failure analysis workflow in complex devices.
• Laser Ablation: Providing high-throughput milling of semiconductor devices for imaging and analysis with electron microscopy while preserving sample integrity.
• Atom Probe Tomography (APT) Sample Preparation: Offering atomic-resolution 3D compositional analysis of materials using focused ion beam microscopy. Device
• Delayering: Critical for detecting buried electrical faults in increasingly complex semiconductor designs without damaging the devices.
• ESD Compliance Testing: Verifying devices meet electrostatic discharge compliance standards to prevent damage to small features and structures in semiconductors.